发明名称 PRODUCTION OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To allow the exact formation of fine patterns even on a substrate having steps by using a specific silicone compd. as an intermediate layer. CONSTITUTION:The three-layered structure resist contg. the silicone compd. produced by substituting the hydrogen atom of the silanol group contained in the silicone compd. expressed by formula III by the group expressed by formula II as the intermediate layer 3 is used. In formula I, R<1> denotes a vinyl group or aryl group; R<2> denotes an aryl group; (l), (m), (n) are respectively 1-10000 positive integer. In formula II, R3-R5 denote 1-4C alkyl group; 2-4C alkenyl group or aryl group, either two of the three or the three of which may be the same. Excellent oxygen plasma resistance is obtd. and the film formation is facilitated.
申请公布号 JPH0232356(A) 申请公布日期 1990.02.02
申请号 JP19880180265 申请日期 1988.07.21
申请人 FUJITSU LTD 发明人 SHIBA SHOJI;SAITO KAZUMASA;KAWASAKI YOKO;WATABE KEIJI;YONEDA YASUHIRO
分类号 G03F7/075;G03F7/11;G03F7/26;H01L21/027 主分类号 G03F7/075
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