| 摘要 |
PURPOSE:To obtain a semiconductor storage device which realizes a high-speed operation and a large integration by the use of a small number of elements and a simplified structure and whose degree of design freedom is high by providing the following: a transistor whose emitter current or source current has a negative differential characteristic; a resistance means. CONSTITUTION:In a device provided with a transistor 1 and a resistance means 2 the following are arranged: an emitter current IE or a source current of the transistor 2 has a negative differential characteristic; a first power-supply voltage VCC is applied to a collector or a drain 11 of the transistor 1; a second power-supply voltage VEE is applied to an emitter or a source 12 of the transistor 1 via said resistance means 2; an input signal VIN which holds two different operating states selectively is applied to a base or a gate 13 of the transistor 1; an output signal VOUT is taken out from a part where the emitter or the source 12 and the resistance means 2 are connected. For example, a resonance tunneling hot-electron transistor having a characteristic as shown in the graph is used as said transistor 1. |
