发明名称 CMOS BANDGAP REFERENCE VOLTAGE CIRCUITS
摘要 <p>A CMOS bandgap voltage reference which is temperature stable is disclosed. The large temperature-dependent p-tub resistors of prior art arrangements are replaced with relatively small, temperature stable p+ diffusion resistors. The increase in current level needed to compensate for the decrease in resistor value is provided by a simple cascode MOS circuit located between the ratioing resistors and the VSS potential.</p>
申请公布号 EP0194031(B1) 申请公布日期 1990.01.24
申请号 EP19860300703 申请日期 1986.02.03
申请人 AMERICAN TELEPHONE AND TELEGRAPH COMPANY 发明人 KERTH, DONALD ALLAN;SOOCH, NAVDEEP SINGH
分类号 G05F3/24;G05F3/30 主分类号 G05F3/24
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