发明名称 |
CMOS BANDGAP REFERENCE VOLTAGE CIRCUITS |
摘要 |
<p>A CMOS bandgap voltage reference which is temperature stable is disclosed. The large temperature-dependent p-tub resistors of prior art arrangements are replaced with relatively small, temperature stable p+ diffusion resistors. The increase in current level needed to compensate for the decrease in resistor value is provided by a simple cascode MOS circuit located between the ratioing resistors and the VSS potential.</p> |
申请公布号 |
EP0194031(B1) |
申请公布日期 |
1990.01.24 |
申请号 |
EP19860300703 |
申请日期 |
1986.02.03 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
KERTH, DONALD ALLAN;SOOCH, NAVDEEP SINGH |
分类号 |
G05F3/24;G05F3/30 |
主分类号 |
G05F3/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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