发明名称 Semiconductor lasers
摘要 The laser, particularly adapted for operation in the self-pulsation mode, comprises a central mesa 30 formed in an upper cladding layer 24. Normally relatively thick sections are required at either side of the mesa in order to form a waveguide of sufficient to cause self-pulsation operation. In order to control the thickness of the upper cladding layer bounding the mesa is first formed by etching the regions bounding the mesa to relatively thin sections 24a, 24b capable of gauging by optical interferometry. A composite upper cladding layer is then formed by utilizing MOCVD crystal growth techniques to form a butter layer 32 on the upper cladding layer bounding the mesa, the butter layer having an aluminium content about the same as the aluminium content of the AlGaAs upper cladding layer. The composite layer functions as a comparatively thick waveguide which can be formed to the necessary thickness with adequate accuracy to provide a high yield when producing self-pulsation lasers. <IMAGE>
申请公布号 GB2221094(A) 申请公布日期 1990.01.24
申请号 GB19890016501 申请日期 1989.07.19
申请人 * MITSUBISHI DENKI KABUSHIKI KAISHA 发明人 SHIGERU * MITSUI;RYO * HATTORI
分类号 H01S5/00;H01S5/065;H01S5/223;H01S5/323 主分类号 H01S5/00
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