| 摘要 |
PURPOSE:To enable a single chip to oscillate two or more laser rays by a method wherein an element, possessed of two properties of both a donor and an acceptor as a dopant, is grown on a specified III-V compound semiconductor substrate through a molecular ray epitaxy method to form two or more oscillating regions on a single chip. CONSTITUTION:A mask is formed in stripes on a 100 Cr doped semi-insulating GaAs substrate 13 in a [0-11] direction, which is etched to form a normal mesa- shaped substrate provided with 111A faces 14 and 15 on its slope. Next, the following are continuously grown on the substrate 13 through an MBE method: a non-doped high resistance GaAs buffer layer 16; a non-doped high resistance Al0.32Ga0.68As current block layer 17; a Si doped Al0.32Ga0.68As clad layer 18; a Si doped Al0.08Ga0.92As active layer 19; a Si doped Al0.32Ga0.68As clad layer; and a Si doped GaAs contact layer 21. Next, the p-n junction of the contact layer 21 is etched. After that, a SiNX insulating film is formed and a current block layer 22 is formed. Next, a p-type electrode 23 of Au/AuZ and an n-type electrode 24 of AuGe/Ni are evaporated. Then, the substrate 13 is abraded and devided into chips. |
