发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To eliminate the greater part of an expensive metal film of a die attachment part by applying an annular metal film on the inside of an inner lead on the circumference of a die attaching part of an IC chip. CONSTITUTION:An annular metal film 8 is partially formed on the ceramic insulating part 9 between an inner lead 6 a die attachment 3. A sintered metallized layer such as tungsten and molybdenum on the part for applying a metal film is formed on the ceramic of a ceramic package and a metal film is formed by Ni and Au thereon selectively. Thus, after the metal film 8 is formed, Ag paste 4 is stuck on the die attachment 3 to attach an IC chip thereto, the Ag paste is dried at 150 deg.C for about an hour to solidify and the die attachment 3 and the IC chip 1 are fixed completely. The metal film 8 performs its duty of a bank and resin constituents in the Ag paste 4 do not reach the inner lead 6.
申请公布号 JPH027534(A) 申请公布日期 1990.01.11
申请号 JP19880158666 申请日期 1988.06.27
申请人 FUJITSU LTD 发明人 USAMI ISATO
分类号 H01L21/52;H01L23/08;H01L23/12 主分类号 H01L21/52
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