Ohmic electrode for n-type GaAs and method for its manufacture.

摘要

This invention comprises a Pd layer (5) formed on an n-type GaAs semiconductor crystals (1), and a Ge layer (6) being formed on the Pd layer (5), wherein the thickness of the Pd layer (5) is between 300 ANGSTROM and 1500 ANGSTROM and the thickness of the Ge layer (6) is between 500 ANGSTROM and 1500 ANGSTROM . Furthermore, this invention provides an ohmic electrode forming process for compound semiconductor crystals for forming an ohmic electrode on an n-type GaAs semiconductor crystals (1), comprising a first layer forming step for forming a palladium (Pd) layer (5) on a compound semiconductor crystal (1); a second layer forming step for forming a germanium (Ge) layer (6) on the Pd layer (5); and an annealing step for annealing the Pd layer (5) and the Ge layer (6) by a rapid thermal annealing treatment. The Pd layer (5) is formed between 300 ANGSTROM and 1500 ANGSTROM in the first layer forming step; the Ge layer (6) is formed between 500 ANGSTROM and 1500 ANGSTROM in the second layer forming step; and the Pd layer (5) and the Ge layer (6) are heated in the annealing step for 3 seconds to 20 seconds at a temperature of 500 DEG C to 650 DEG C by a rapid thermal annealing treatment. For rapid thermal annealing treatment, the flash annealing treatment is effective.