| 摘要 |
PURPOSE:To obtain a high sensitivity transfer image having good storage stability by providing a photothermal converting layer containing a polymer having a specific structure as a near infrared absorbing dye on a transparent support to semiconductor laser beam having a specific oscillation wavelength region. CONSTITUTION:A support to be used may be transparent to semiconductor laser beam having an oscillation wavelength region at 900-700nm and is com posed of an inorg. material such as glass or quartz glass, a thermoplastic resin such as polymethylmethacrylate or polycarbonate or a thermosetting resin such as an epoxy resin and the near infrared absorbing dye due to the photother mal converting layer provided on the support is represented by formula I or II. In this near infrared absorbing dye, as examples of the anion X<-> of an elec trolyte having an isothianaphthene or pyrrole structure, Cl<->, Br<->, I<-> and CIO4<-> can be designated. A polymer material layer containing said near infrared absorbing dye can be provided on a transparent support by a coating method or an electrolytic polymerization method and, if necessary, a binder such as a urea-melamine resin may be used. |
