发明名称 SEMICONDUCTOR SWITCHING DEVICE
摘要 PURPOSE:To decrease an ON-state voltage, to widen a safe operating area, and to realize fast switching by providing the bypass of a gate current for turn-on between the base and the emitter of a transistor. CONSTITUTION:When the gate current for turn on is permitted to flow by using a gate circuit 3, the current flows in the gate terminal 8 of an arc- suppressing switching device 1, and flows out from the cathode terminal of the device 1, and returns to the circuit 3 bypassing a resistor 4 or a diode 5. Thereby, the device 1 is turned on, and it is possible to permit the current to flow on a load connected to a power source to be connected to an anode terminal 6 and the cathode terminal 7. Next, when the gate current for turning off the device 1 is permitted to flow from a terminal 8, a reverse bypass is formed between the gate and the cathode, and a depletion layer is formed, then, the device 1 is turned off. As a result, the transistor 2 is turned off, and no load current flows.
申请公布号 JPH022709(A) 申请公布日期 1990.01.08
申请号 JP19880147024 申请日期 1988.06.16
申请人 HITACHI LTD 发明人 TERASAWA YOSHIO
分类号 H03K17/73;H03K17/567;H03K17/732 主分类号 H03K17/73
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