发明名称 MASK AND METHOD FOR EXPOSURE
摘要 PURPOSE:To correct the warpage of the exposure mask and to perform mask pattern transfer with invariably high accuracy by forming the mask of a support film expanded in a support frame and a material which can absorb an energy beam for exposure and providing a guide layer. CONSTITUTION:Guide layers 10 and 20 which prevent the support frame 1 from curving are formed on the support frame 1, which is made of silicon; and the guide layers 10 and 20 consist of gold layers 12 and 22, silicon oxide layers 14 and 24, and chromium layers 13 and 23 deposited on the support frame 1 in order. Consequently, the guide layers 10 and 20 are used to correct the curvature caused in the manufacturing process of the exposure mask and further used effectively to correct the warpage caused in the long-period use of the mask, thereby realizing high-accuracy exposure.
申请公布号 JPH02969(A) 申请公布日期 1990.01.05
申请号 JP19880141282 申请日期 1988.06.08
申请人 SANYO ELECTRIC CO LTD 发明人 KOBAYASHI SHUNICHI
分类号 G03F1/20;G03F1/22;G03F1/50;G03F1/68;H01L21/027;H01L21/30 主分类号 G03F1/20
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