| 摘要 |
PURPOSE:To reduce damage to a sample by reducing an electron beam which irradiates a defect part of a photomask, etc., until charges which are accumulated with an ion beam can be neutralized when the defect is corrected. CONSTITUTION:When a prescribed area of the sample 9 to be irradiated with the converged ion beam from an ion source 7 is irradiated with the electron beam from an electron gun 6, the electron beam is reduced until the charge-up state by the ion beam can be neutralized at the time of correcting the defect of the photomask, etc., as the sample. Consequently, the defect of the photomask, etc., can accurately be recognized and the accuracy of the defect correction can be improved; and when the defect is corrected, damage to the photomask as a sample and a glass substrate is reduced. |
