Solid state image pick-up device having a number of static induction transistor image sensors

摘要

A solid state image pick-up device having a number of static induction transistor image sensors arranged in a matrix form, each static induction image sensor includes a drain region formed by an n+ substrate connected to the earth potential, a channel region formed by an n- epitaxial layer grown on the substrate, a ring-shaped p+ gate region formed in a surface of the epitaxial layer, an n+ source region formed in a part of the surface of the epitaxial layer surrounded by the ring-shaped gate region and a p+ overflow drain region formed in the surface of the substrate underneath the gate region. By adjusting a time duration of a shutter control signal having a positive voltage applied to the overflow drain region, a time period during which photocarriers, i.e. electrons are flown into the gate region and stored therein, can be controlled at will, and an electronic shutter function can be achieved.