| 摘要 |
PURPOSE:To eliminate deterioration of open-end voltage and improve photoelectric transfer efficiency by a method wherein a laminated conductive film consisting of transparent conductive films and silicon films repeatedly layered is formed on a substrate. CONSTITUTION:A transparent conductive film 2 made of metallic oxide such as In2O3, ITO, SnO2 and ZnO is formed on a substrate 1, and on said layer a thin silicon film 3 made of polycrystalline or microcrystalline silicon and amorphous silicon is formed. Similarly, a transparent conductive film 4 made of metallic oxide, a silicon film 3', a transparent film 4', etc. are layered in this sequence. Finally, by forming a silicon film, a laminated film 5 is formed. This laminated film 5 is formed by means of CVD, PCVD, photo CVD, sputtering, ionization evaporation, etc. and their reactive evaporation methods. This improves open-end voltage and photoelectric transfer efficiency of an amorphous silicon photoelectric transfer device. |
