| 摘要 |
<p>A fully optical random access memory device is disclosed having an opto-electronic substrate. A write beam, having a wavelength within the absorption band of the opto-electronic substrate, and a read beam, having a wavelength outside the absorption band of the opto-electronic substrate, are used to read and write information to the fully optical random access memory (26). The noninvasive optical reading of information provides a device capable of sub-nanosecond access times.</p> |
