| 摘要 |
PURPOSE:To enable formation of a fine pattern high in precision by forming an upper resist layer on a lower resist layer formed on a base plate, exposing the upper layer to electron beams to form the pattern, and forming a thin film resistant to dry etching, flattening the surface, and forming a mask after the following steps. CONSTITUTION:The lower resist layer 12 is formed on the base plate 11 by coating it with a photoresist or an electron beam resist and hardening it, and the upper resist layer 13 is formed by coating the layer 12 with an electron beam resist and baking it. The upper resist layer 13 is exposed to electron beams and developed to form the pattern, and a silicone resin film 14 is formed on the layer 13, and then, the surface of this film 14 is flattened by RIE using CF4 until the pattern of the layer 13 is disclosed. The desired fine pattern is obtained by removing the layer 13 with RIE using O2 gas and processing the layer 12. |
