| 摘要 |
PURPOSE:To allow the surface of a substrate to have a high-quality clealiness by polising the substrate with a rinsing fluid containing a dechlorination agent at the time of the last rinsing process in the polishing process. CONSTITUTION:After the polishing process, dripping of an abrasive fluid is stopped. At the same time, the polishing is conducted while supplying a rising fluid for a certain period of time. The rinsing fluid contains a chemical dechlorination agent such as sodium thiosulfate water solution (Na2 S2O3) to eliminate chlorine which is a base of HClO existing in a mirror-like abrasive fluid. By such a simple method, it is possible to make the surface of a GaAs substrate completely free of haze and to reduce the amount of grains attached to the substrate surface to 1/3 or less as compared with in the past.
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