| 摘要 |
PURPOSE:To suppress the noise of a semiconductor device and reduce the distortion of a signal sufficiently by forming a resistance element using a single crystal semiconductor layer provided on an insulating layer. CONSTITUTION:An insulating layer 2 with a required thickness is formed on an Si substrate 1 and a single crystal Si layer 3 is formed on the insulating layer 2. An impurity such as boron, phosphorus or arsenic is introduced into the layer 3. When the impurity is introduced, the impurity is introduced with a sufficiently low concentration to obtain a high sheet resistance in order to avoid the problem of the spread of a depletion layer. An Si oxide film 4 is formed on the layer 3 and apertures 6a and 6b are formed in the oxide film 4 on both the ends of the layer 3. Al electrodes 5a and 5b are formed in the apertures 6a and 6b respectively. A resistance element has a structure composed of the insulating layer 2 and the layer 3 formed on it and, as the resistor is made of single crystal, the noise can be sufficiently suppressed. Further, as the layer 3 is surrounded by the insulating layer 2 and the oxide film 4 and there is no spread of the depletion layer, the distortion of a signal can be sufficiently raduced. |
