| 摘要 |
A method is disclosed for the manufacture of a multilayered interconnect structure on an insulating substrate (l). First and second conductive layers (2, 3) are formed on one and on the other (rear) surfaces, respectively, of the insulating substrate (l). An insulating layer (7) is formed, by means of a plasma CVD method, on the surface of the insulating substrate (l), to electrical insulation between interconnect layers (8, l3). This is followed by a reactive ion etching step. This results in the formation of the aforementioned layer of a uniform thickness and having a uniform etching rate. That is, with the conductive layer (3) formed on the rear surface of the insulating substrate (l), the complete insulating substrate (l) is placed at the same potential level, whereby a uniform electrochemical reaction occurs on the surface thereof (l), resulting in the formation of the layers (7, 8, ll, l3) having a uniform etching rate, and in the formation of these layers each having the same thickness. |
