发明名称 Semiconductor memory device
摘要 A precharge circuit is provided between bit lines, on the one hand, and a power source potential on the other. The precharge circuit is controlled to be conductive/nonconductive by a clear signal. A control unit is also provided, which controls a decoder when the clear signal is supplied so as to set all the word lines in a selective state. In a clear mode, writing circuits write the same data simultaneously into all of the memory cells.
申请公布号 US4882708(A) 申请公布日期 1989.11.21
申请号 US19880145411 申请日期 1988.01.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HAYAKAWA, SHIGEYUKI;ISOBE, MITSUO;OHTANI, TAKAYUKI
分类号 G11C11/41;G11C11/419 主分类号 G11C11/41
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