发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To obtain a signal change detector where number of components is a few and its pulse width is easily changed by providing a 2nd inverter transistor(TR) between an address signal input terminal and an inverter TR and providing a capacitance at the output of the TR. CONSTITUTION:An address signal input terminal A connects to the input of a CMOS inverter 12 and its output connects to a capacitor 13 and an input of a CMOS inverter 12. When an address signal entering the input terminal A changes from 'L' to 'H', the level of a node H changes from 'H' to 'L' because of the discharge of the capacitor 13 caused by an NMOS TR turned on. In this case, there is a state where a PMOS and an NMOS TR of the inverter 10 are simultaneously turned on, a through-current alpha flows, a voltage change is caused at an output terminal I and a signal change detecting pulse is obtained. On the other hand, when the address signal entering the input terminal A changes from 'n' to 'L', the level of the node H changes from 'L' to 'H' by the charging of the capacitor 13 caused by the turned on PMOS TR of the inverter 12 to obtain a signal change detection pulse similarly.
申请公布号 JPH01284012(A) 申请公布日期 1989.11.15
申请号 JP19880112810 申请日期 1988.05.10
申请人 MITSUBISHI ELECTRIC CORP 发明人 KURIYAMA SACHITADA;ANAMI KENJI
分类号 H03K5/1532;H03K5/00 主分类号 H03K5/1532
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