| 摘要 |
PURPOSE:To form a layer of silicon carbide on the surface of metallic particles by floating the metallic particles in a plasma and supplying a reactive gas containing carbon and silicon therein. CONSTITUTION:Metallic particles 8 are put in a chamber 2 and a reaction container 1 is evacuated to a pressure as high as 10<-4>-10Torr. Impeller 4 for blowing up is rotated in the direction of the arrow to raise the particles 8 up into the reaction chamber 2. A reactive gas containing silicon and carbon, and hydrogen are supplied through a gas supply pipe 6. Hydrogen is supplied only as necessary. High-frequency power is applied to a high-frequency coil 7 to generate a plasma within the reaction chamber 2. Silicon carbide generated by the dissolution of the reactive gas or a metal-Si-C-based compound generated by the reaction of silicon carbide with a metal coats the surfaces of the particles 8. |
