| 摘要 |
PURPOSE:To prevent a pattern width of a resist from being changed largely even when a stepped part exists on the surface of a substrate by a method wherein a process to produce a temperature difference between the surface and the rear of the semiconductor substrate is added to a conventional process. CONSTITUTION:A resist film 2 is formed on the surface of a semiconductor substrate 1; this semiconductor substrate 1 is cooled and the resist film 2 is heated. The resist film 2 is exposed to light selectively; an exposed part is removed. That is to say, while the semiconductor substrate 1 is being cooled, the resist film 2 is heated; then, a temperature distribution is caused inside the resist film; a chemical reaction between a resin of the resist and a photosensitizer is caused partially near the surface of the resist. In the exposed part of the resist film, the photosensitizer that has not reacted chemically causes a photoreaction and can be dissolved in a developing solution. An unexposed part is not dissolved in the developing solution. Accordingly, a difference in a speed of dissolution against the developing solution between the exposed part and the unexposed part becomes large; an angle of inclination at a side wall of the resist after a developing operation becomes large. By this setup, a change in a line width when a resist line crosses a stepped part becomes small. |
