发明名称 FORMING METHOD FOR SEMICONDUCTOR QUANTUM BOX
摘要 PURPOSE:To improve uniformity of the size of a quantum box by mixing crystals of a quantum well structure in a spot state, and forming the box in which mixed crystal is not formed in its gap. CONSTITUTION:Many mixed crystal regions are generated in a spotlike region 5, and a quantum box is formed in its gap part 6. In order to form the mixed crystal region, an impurity ion implanting method, a laser beam radiating method, etc., can be employed. Accordingly, since the box is formed in the gap of FIB spots having relatively uniform size, even if the spots having, for example, approx. 1000Angstrom of diameter are slightly irregular in size, the irregularity of the sizes can be cancelled in the gap part. Thus, the box having uniform size of approx. 200Angstrom of one piece can be formed.
申请公布号 JPH01270220(A) 申请公布日期 1989.10.27
申请号 JP19880099935 申请日期 1988.04.21
申请人 NEC CORP 发明人 KITAMURA MITSUHIRO
分类号 H01L21/20;H01L21/265;H01L21/268;H01L29/06;H01S5/00;H01S5/34 主分类号 H01L21/20
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