| 摘要 |
<p>PURPOSE:To form an additional capacity electrode having sufficient capacity without increasing an etching process by using tantalum as the additional capacity electrode and tantalum pentoxide as an additional capacity insulating film and forming and additional capacity in superposition on the end part of the picture element electrode connected to a thin-film transistor adjacent to the end part of a gate electrode. CONSTITUTION:The additional capacity is formed in superposition on the end part of the picture element electrode 10 connected to the thin-film transistor adjacent to the end part of the gate electrode 3. The gate electrode 3 consisting of the metal tantalum, the gate insulating film 4 formed by laminating the tantalum pentoxide and plasma-CVD silicon nitride successively, and the additional capacity insulating film 5 are provided. The electrode 3 for the additional capacity Cs is thereby formed without increasing the film forming and etching process. Since the tantalum pentoxide having a high dielectric constant is used for the insulating film, the large capacity is obtd. even if the area of the electrode 3 for the additional capacity Cs is decreased. The additional capacity is thus formed at a high yield without giving so much influence on the other processes.</p> |
