发明名称 MONOLITHIC INTEGRATED SEMICONDUCTOR CIRCUIT
摘要 <p>A monolithically integrated semiconductor circuit assembly includes a silicon substrate, an active layer with active electrical structures in a semiconductor circuit disposed on the silicon substrate, a passivating layer disposed on the active layer, at least one electrically conducting protective layer disposed on the passivating layer at least above the active electrical structures, and a casing disposed above the protective layer.</p>
申请公布号 EP0169941(B1) 申请公布日期 1989.10.18
申请号 EP19840115850 申请日期 1984.12.19
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 SCHRENK, HARTMUT, DR.
分类号 H01L21/31;G06F21/87;G06K19/073;G07F7/10;G11C7/24;G11C16/22;H01L21/822;H01L23/58;H01L27/04 主分类号 H01L21/31
代理机构 代理人
主权项
地址