| 摘要 |
PURPOSE:To enable the high density integration of an integrated circuit, by a method wherein, after a deposition film is formed on a surface opposite to the integrated circuit forming surface of a semiconductor substrate, by chemical vapor growth in accordance with the warp condition at that time, transfer pattern exposure is executed on the integrated circuit forming surface of the semiconductor substrate. CONSTITUTION:The warp condition of a semiconductor substrate 6 after various semiconductor manufacturing processes are finished is measured. According to the checked warp condition, an insulating film to generate stress in the direction to flatten the integrated circuit forming surface of the semiconductor substrate 6 is deposited on the rear of the semiconductor substrate 6, and the flatness of the semiconductor substrate is improved. The transfer pattern of photolithography process 3 is subjected to projection exposure on the semiconductor substrate 6 whose flatness is improved in such a manner, so that patterning with a desired dimension is enabled on the semiconductor substrate 6. Thereby, an integrated circuit of high integration degree can be manufactured with high yield. |
