| 发明名称 |
METHOD AND APPARATUS FOR MEASURING THE ION IMPLANT DOSAGE IN A SEMICONDUCTOR CRYSTAL |
| 摘要 |
<p>A technique for measuring the ion implant dosage involves method and apparatus for directing pulses of coherent radiation from a laser to the surface of a semiconductor that has been subjected to ion implant. The intensity of the third harmonic reflected from the semiconductor is determined and correlated to determine the ion dosage within the semiconductor.</p> |
| 申请公布号 |
CA1262291(A) |
申请公布日期 |
1989.10.10 |
| 申请号 |
CA19870552742 |
申请日期 |
1987.11.25 |
| 申请人 |
FORD MOTOR COMPANY OF CANADA, LIMITED |
发明人 |
BOMBACK, JOHN L.;JAMES, JOHN V.;WANG, CHARLES C. |
| 分类号 |
H01L21/66;G01N21/63;G01N21/84;G01R31/265;H01L21/265;(IPC1-7):G01N21/84 |
主分类号 |
H01L21/66 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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