| 摘要 |
PURPOSE:To prevent the increase of the resistance value of a wiring composed of an aluminum film, and to increase the operation speed of a device by connecting the wiring to a semiconductor region through interposition of a metallic film obviating precipitation in the aluminum film of the main component of a substrate. CONSTITUTION:In a device with a wiring 17 consisting of an aluminum film connected to a semiconductor region 13 in the main surface of a semiconductor substrate 1, the wiring 17 is connected to the semiconductor region 13 while interposing a metallic film (a titanium nitride film, etc.) 14C preventing precipitation into the aluminum film 17 of the main component, silicon, of the substrate 1. Consequently, silicon as the principal component of the semiconductor substrate 1 is not precipitated into the wiring 17 made up of the aluminum film. Accordingly, the increase of the resistance value of the wiring is obviated, and the working speed of the semiconductor integrated circuit device is accelerated. |
