| 摘要 |
An epitaxial layer of a compound semiconductor is grown in selected regions of a substrate by a laser activation process wherein the substrate is heated to 300 to 350 DEG C in an atmosphere of hydrides and low alkyls of the semiconductor elements and is irradiated by focussed ultraviolet laser radiation to effect deposition of the semiconductor. Typically the atmosphere comprises a mixture of arsine and trimethyl gallium to effect deposition of gallium arsenide. The process may be used in the fabrication of multilayer structures and quantum well devices. |
