| 摘要 |
PURPOSE:To prevent or reduce the fading of a pattern, and to improve the reliability and manufacturing yield of a semiconductor device by forming a spiral groove or a plurality of grooves at least in the rear of a warped semiconductor substrate, fast sticking a mask for exposure onto the surface of the semiconductor substrate and forcibly flattening the surface of the semiconductor substrate and exposing the surface of the substrate. CONSTITUTION:An n-GaAs1-xPx composition slope epitaxial layer 2, a phosphorous component of which is increased gradually until (x) is brought to 0.39 through a vapor growth method, is laminated onto the surface of an n<+>-GaAs substrate 1 having face orientation of 100, and an n-GaAs0.61P0.39 epitaxial layer 3 having the phosphorus component of 0.39 is laminated. Silicon dioxide films are applied onto both surfaces of the n<+>-GaAs substrate 1, to which the epitaxial layer is shaped, through a CVD method. A negative type photoresist is applied onto the surface, the GaAsP epitaxial layer 3, of the substrate and the whole surface is exposed. A mask for exposure for forming an element is fast stuck onto the surface of the substrate, and the surface of the substrate is flattened forcibly and exposed. |
