| 摘要 |
PURPOSE:To decrease smear and to atain a high quality reproduced picture, by providing a well construction while connecting a part of it to a photodetector section and a transfer section independently. CONSTITUTION:An n type semiconductor substrate 30 is provided with n type semiconductor regions 31, 32 forming the photodetection and the transfer sections, and p type wells 33, 34 are formed around each region by surrounding it. A part of the p type wells 33, 34 is formed with a bonding part 35. The upper part of the bonding part 35 is provided with a shift gate 36 transferring the charge produced at the photodetection section including the region 31 to the transfer section including the region 32, and the upper part of the region 32 is provided with a transfer electrode 37 to pick up the stored charge as information. Thus, if electrons 39 being a cause to smear are leaked to the transfer section, since a part of the substrate 30 is inserted on the way of electron path, much electrons are absorbed in the substrate 30, and the smear is decreased. |
