| 摘要 |
PURPOSE:To enhance the integration density of a semiconductor integrated circuit device having a memory device by a method wherein the area of a dynamic memory element is reduced and the characteristic of a nonvolatile memory element and an element in a peripheral circuit is made optimum. CONSTITUTION:The following are formed in an identical manufacturing process: a semiconductor region 19 used to form one electrode of a capacitive element (C) for information storage use of a planar structure of a dynamic memory element DM; a semiconductor region 15 connected to a drain region of a nonvolatile memory element FM of an FLOTOX structure. After that, the following are manufactured in an identical manufacturing process: a dielectric film 8 of the capacitive element (C) for information storage use; a tunnel insulating film 8 of the nonvolatile memory element FM. By this setup, a manufacturing process of a semiconductor integrated circuit device can be reduced by a portion corresponding to a process used to form the semiconductor region 15 and the tunnel insulating film. In addition, the dielectric film of the capacitive element (C) for information storage use can be formed to be thin; the area of the dynamic memory element can be reduced. |
