| 摘要 |
PURPOSE:To prevent uniformity of sensitivity to a long wavelength light and deterioration of resolution by providing a region having a high impurity consentration than that of a substrate and poled the same as the semiconductor substrate to a part below a photoelectric converting region. CONSTITUTION:A transparent insulation film 2 is provided on a p type substrate 11. Moreover, a BCD (bulk transfer charge transfer element) electrode 3, a storage gate electrode 4, a transfer gate electrode 5, an n<+> diffusion layer 6 being a photoelectric converting section, an n type layer 7 being a channel of the BCD and a p type high concentration region 8 are formed. In figure, 9 indicates an incident light. Then the said region 8 is provided in contact with the n<+> diffusion layer 6. The life of the carrier is short in the region and the spread of depletion layer of p-n junction is small, then the signal carrier subject to photoelectric conversion at the depth in the semiconductor with the light of a long wavelength does not reach the n<+> diffusion layer 6. Thus, the local ununiformity of the sensitivity to the long wavelength light due to the said signal carrier and the deterioration of resolution are prevented. |
