发明名称 |
Semiconductor device and its manufacturing method |
摘要 |
The present invention relates to a semiconductor device manufactured by removing a part of a semiconductor layer containing an amorphous semiconductor and which is formed over separate electrodes existing on the same substrate and characterized in that the mean oxygen content of the portion of the semiconductor adjacent the removed portion and 10 mu m inward is in a range of 0.5-10 atom %, and to a manufacturing method for the semiconductor device characterized in that the semiconductor layer is removed partly in an oxidative environment by the use of laser ray means. The invention provides semiconductor devices diminished in leak current.
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申请公布号 |
US4862227(A) |
申请公布日期 |
1989.08.29 |
申请号 |
US19890298282 |
申请日期 |
1989.01.17 |
申请人 |
KANEGAFUCHI KAGAKU KOGYO KABUSHIKI KAISHA |
发明人 |
TSUGE, KAZUNORI;KUWAMURA, SHINJI;TAWADA, YOSHIHISA |
分类号 |
H01L31/04;H01L21/268;H01L21/302;H01L27/142;H01L31/20 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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