| 摘要 |
A novel technique to detect oxydonor generation in semiconductor wafers. Oxydonor generation in a P-type substrate may be sufficient to create a P-N junction within the substrate which may adversely affect device performance. A technique of the present invention is a two-step process for determining the presence of such an oxydonor generated P-N junction. For a capacitor device, the capacitance of the device is measured under varying test voltages to determine a capacitance-voltage response. Then a second capacitance-voltage response is measured when the device is subjected to an external energy source. For a diode device, the forward current is measured with the device under varying test voltages to determine a current-voltage response. Then a second currrent-voltage response is measured when the device is subjected to an external energy source. By comparing device response with and without the application of external energy, a device having oxydonor generation problems is efficiently detected.
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