发明名称 |
Solid state image device |
摘要 |
A solid state imaging device comprises a transparent electrode, a photoconductive layer, and a plurality of scanning circuits for consecutively selecting signals in the photoconductive layer. The photoconductive layer is formed of amorphous semiconductor comprising amorphous silicon as the major component and further containing an element serving to lower the capture level within the energy gap and a trace amount of chalcogen element as a chemical modifier.
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申请公布号 |
US4860076(A) |
申请公布日期 |
1989.08.22 |
申请号 |
US19880277414 |
申请日期 |
1988.11.29 |
申请人 |
FUJI PHOTO FILM CO., LTD. |
发明人 |
TABEI, MASATOSHI;IKEDA, MITSURU;NAKAJIMA, YOSUKE |
分类号 |
H01L27/146;H01L31/10;H04N5/335;H04N5/341;H04N5/357;H04N5/369;H04N5/372;H04N5/374 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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