| 摘要 |
PURPOSE:To prevent a gate insulating film from damaging by enhancing the resistance value of the vicinity of a step in which an insular semiconductor thin film and a gate electrode cross over through the film higher than that of the other part. CONSTITUTION:The resistance value of the vicinity of steps 17, 37 in which an insular pattern 2 and a gate electrode 4 cross over through a gate insulating film 3 at the end of the pattern 2 is enhanced higher than that of the other part. Accordingly, source, drain currents scarcely flow near the steps 17, 37, thereby reducing the source, drain currents flowing near the steps 17, 37 in which the pattern 2 and the electrode 4 overlap. Thus, it can prevent the insulating film near the steps from damaging. |
