Method for producing thin, strip-shaped silicon crystals having a planar surface, suitable for fabrication of solar cells

摘要

Planar silicon strips (3) having a smooth surface are obtained - in a process in which the substrate body (1) employed is a graphite net which is passed tangentially across a silicon melt (2) held in a trough (6) and is thus coated with silicon - by there being arranged, downstream of the growth section (W) proper, a melting section (A). The latter consists of a cover (5) above the melt surface (2) whose temperature T1 is set in such a way that it is greater than or equal to the mean temperature T2 on the net-side surface of the substrate body (3) coated with silicon. The process is used in the production of silicon strips for solar cells, the substrate bodies used being carbon fibre nets (1) having internal mesh sizes of greater than 1.5 mm. <IMAGE>