| 摘要 |
<p>PURPOSE:To prevent the surface of a glass substrate of a connection terminal part from being roughened or a film of a gate wiring part from being stripped off by a method wherein, when a protective insulating layer is to be patterned, the connection terminal of the gate wiring part and a region exposed at the glass substrate are coated with a photoresist. CONSTITUTION:Silicon nitride or silicon oxide to be used as a gate insulating layer 3 and silicon nitride or silicon oxide to be used as an i-a-Si layer 4 and a protective insulating layer 5 are deposited on a glass substrate 1 where a gate electrode and a gate wiring part have been formed, by a plasma CVD method by using a metal mask and by making use of a connection terminal part of the gate wiring part 2 as a mask; in succession, a photoresist 7 as an etching mask of the protective insulating layer 5 to be used to expose the i-a-Si layer of a source-drain part of a TFT is formed in a pattern of a prescribed shape. Then, the protective insulating layer is etched by using a buffer solution of hydrofluoric acid by making use of the photoresist pattern as the mask. During this operation, because the glass surface of a connection terminal part of the gate wiring part is covered with the photoresist 7, the surface is not corroded.</p> |
