Structure of a protection for the outputs of an integrated circuit of a MOS type.

摘要

Structure for protecting against overvoltages of an output amplifier of a MOS type integrated circuit, in which a bidirectional conduction device (30) is connected between a pin (31) connected to the drain or to the source of the MOS transistor to be protected and a reference voltage, and a resistor (56) is connected between the bidirectional breakdown device and the MOS transistor to be protected, the value of the resistor being chosen so that the product of this value times a current less than the maximum permissible current in the drain/source of the transistor to be protected is slightly greater than the difference between the breakdown voltage of the protection device and the conduction voltage on the drain/source of the MOS transistor. <IMAGE>