发明名称 DICING OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To inhibit the cracking of a scribing line by providing a protective film separated from a protective film formed onto a semiconductor element to a predetermined section of a scribing-line and dicing the separated protective film section. CONSTITUTION:A semiconductor element 2 is formed onto a semiconductor wafer 1, and a protective film 3 for protecting the element 2 is shaped onto the surface of the element 2. A protective film 31 separated from the protective films 3 for protecting the surfaces of the elements is shaped at approximately the central section of a scribing line 4 between the adjacent elements 2. Consequently, the protective film 31 on the line 4 relaxes or absorbs excessive force applied to the wafer 1 on dicing. Accordingly, the cracking of the scribing line is inhibited.</p>
申请公布号 JPH01196850(A) 申请公布日期 1989.08.08
申请号 JP19880023068 申请日期 1988.02.02
申请人 MATSUSHITA ELECTRON CORP 发明人 SAKUMA MASAHIRO
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
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