发明名称 Method of manufacturing masked semiconductor laser
摘要 A masking layer is formed on the light-emitting mirror surface of a semiconductor laser body. The masking layer is capable of blocking light emitted from the semiconductor laser body and of being thermally melted and evaporated by exposure to the emitted light. When the masking layer is formed on the light-emitting mirror surface of the semiconductor laser body, a small light-emitting hole is defined in the masking layer by the heat of the emitted light which is effective to prevent the material of the masking layer from being evaporated on a portion of the light-emitting surface.
申请公布号 US4855256(A) 申请公布日期 1989.08.08
申请号 US19880155513 申请日期 1988.02.12
申请人 RICOH COMPANY, LTD.;KOBAYASHI, HIROSHI;MACHIDA, HARUHIKO 发明人 KOBAYASHI, HIROSHI;MACHIDA, HARUHIKO;HARIGAYA, MAKOKO;IDE, YASUSHI;AKEDO, JUN
分类号 H01S5/00;H01S5/028;H01S5/10 主分类号 H01S5/00
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