发明名称 Single frequency high power semiconductor laser
摘要 A distributed feedback heterostructure semiconductor laser provides a single frequency at high power by having a wide output facet so that the power density at the output facet is low enough to avoid catastrophic optical mirror damage. Oscillation is obtained in the center of a pumped trapezoidal gain medium layer between the wide output facet and a relatively narrow rear facet. Stimulated emission of radiation in the balance of the pumped trapezoidal area produces high power output. At the opposite end of the gain layer from the output facet, a parallel edged, index guided pumped region of the gain layer provides a single transverse mode wave guide. A distributed feedback grating, preferably in the region with parallel sides, selects a single longitudinal oscillation mode independent of Fabry-Perot oscillation between the facets. Preferably, the output facet is anti-reflective for minimizing Fabry-Perot oscillation. Alternatively, the grating can be in an unpumped area aligned with the pumped area as a distributed Bragg reflector.
申请公布号 US4856017(A) 申请公布日期 1989.08.08
申请号 US19870138556 申请日期 1987.12.22
申请人 ORTEL CORPORATION 发明人 UNGAR, JEFFREY E.
分类号 H01S5/10;H01S5/12;H01S5/125;H01S5/16;H01S5/20;H01S5/227 主分类号 H01S5/10
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