| 摘要 |
PURPOSE:To make the size of a cell small and to make it possible to implement a large capacity, by using a side wall part that is formed by partially etching a semiconductor substrate as a part of a transistor as a memory cell. CONSTITUTION:A nonvolatile memory cell is a Flotox(floating oxide) type cell comprising a selective transistor 7 and a memory cell transistor 2. A channel region is formed on a side wall part. Thus, the size of the cell can be reduced by about 30%. A tunnel region 23 of an oxide film is used, and a tunnel current is made to flow through a floating gate 21. A control gate 22 is provided on the gate 21. |
