| 发明名称 |
LOW-LOSS AND HIGH-SPEED DIODES |
| 摘要 |
A diode having a Schottky barrier which permits bidirectional passage of minority carriers as well as majority carriers through the provision of a bidirectional conducting Schottky electrode that substitutes for the conventional Schottky electrode used in Schottky diodes or for the low-high electrode in Pn junction diodes. |
| 申请公布号 |
DE3279779(D1) |
申请公布日期 |
1989.07.27 |
| 申请号 |
DE19823279779 |
申请日期 |
1982.09.10 |
| 申请人 |
NIPPON TELEGRAPH AND TELEPHONE CORPORATION |
发明人 |
AMEMIYA, YOSHIHITO;MIZUSHIMA, YOSHIHIKO |
| 分类号 |
H01L21/285;H01L29/47;H01L29/872;(IPC1-7):H01L29/91 |
主分类号 |
H01L21/285 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
