发明名称 |
CHARGE-COUPLED IMAGE SENSOR ARRANGEMENT |
摘要 |
<p>Charge-coupled image sensor arrangement. The invention relates to a charge-coupled image sensor of the line transfer type comprising a number of parallel lines (2-6) which are each constituted by an n-phase CCD. An electrode (12-16) of each CCD is arranged parallel to this CCD separately for each CCD. The other (n-1) electrodes (17-20) extend transversely to the charge transport direction over all CCD's. The first-mentioned electrode (12-16) is used as a selection gate and is moreover used, depending upon the applied voltage, as an integration gate or as a blocking gate during the integration period.</p> |
申请公布号 |
CA1257684(A) |
申请公布日期 |
1989.07.18 |
申请号 |
CA19860501081 |
申请日期 |
1986.02.04 |
申请人 |
N.V.PHILIPS'GLOEILAMPENFABRIEKEN |
发明人 |
ESSER, LEONARD J.M.;PELGROM, MARCELLINUS J.M. |
分类号 |
H04N5/335;H01L27/148;H04N3/15;H04N5/32;(IPC1-7):H04N3/15;H01L27/14 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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