| 摘要 |
<p>PURPOSE:To decrease the number of times of photoetching and to improve the yield by bringing a light shielding film and a semiconductor film to patterning by a first photodetecting, eliminating the lower side light shielding film by leaving a part thereof by a second photoetching and bringing a picture element electrode film to patterning by a third photoetching. CONSTITUTION:The lower side light shielding film 3, a semiconductor film 4 and the upper side light shielding film 5 are provided successively on an insulating substrate 1, the upper side light shielding part 5 and the semiconductor film 4 of a driving element part are brought to patterning by the first photoetching, and the lower side light shielding film 3 is eliminated by leaving the driving element part and its extended part by the second photoetching. Subsequently, after a transparent conductive film 8 has been stuck, a connecting film 7 for connecting the upper side light shielding film 5 of the driving element 30 side and a picture element electrode film 10 being overlapped partially on the extended part of the lower side light shielding film 3 are brought to patterning by the third photoetching. In such a way, the number of times of photoetching which has required four times at least is decreased to three times, the generation rate of a fault is decreased and the yield can be improved.</p> |
