| 摘要 |
PURPOSE:To allow the beam waists to exist horizontally and vertically to the junction and also at the edge of a resonator by providing a light wave guide in a window region as well. CONSTITUTION:For example, an N type GaAs layer 42 is formed by the liquid epitaxial growth method in the thickness of about 0.6mum on the P type GaAs substrate 41 and a striped pattern is also formed on the surface of N type GaAs layer 42. Since a window is formed, the GaAs layer 42 is etched through this window. The P-Ga0.5Al0.5As clad layer 33, P-Ga0.55Al0.16As active layer 34, N-Ga0.5Al0.5As clad layer 34 and the N-GaAs cap layer 36 are respectively formed on the flat area. At the surface of N-GaAs cap layer 36, the Au-Ge-Ni is vacuum deposited while on the rear surface of P-GaAs substrate 31, the Au- Zn is vacuum deposited. These are heated and alloyed, and thereby electrode layer can be formed. Next, after vacuum depositing aluminum at the rear surface of the P-GaAs substrate 31, a pattern matched to the pitch of internal channel is formed and it is cleavated at the center of the window region in the length L1 and thereby a resonator can be formed. |
