发明名称 ACTIVE MATRIX SUBSTRATE
摘要 <p>PURPOSE:To obtain a sufficient transmission characteristic and to enlarge a write rate by setting the total film thickness of an ITO to below the film thickness by which the transmittivity exceeds a prescribed value, and also, setting the film thickness of a cumulative capacity electrode to above thickness for attaining a prescribed write rate. CONSTITUTION:The total film thickness of an ITO (tin oxide) is set to below some prescribed value, and also, among a common electrode 4, a picture element electrode 3 and a cumulative capacity electrode 2 which are formed by the ITO, the film thickness of the cumulative capacity electrode 2 is made thicker than that of other transparent electrodes 3, 4. That is, for instance, by setting the film thickness of the cumulative capacity electrode 2, the film thickness of the picture element electrode 3, the film thickness of the common electrode 4 and the total film thickness of the ITO to 3,000Angstrom , 500Angstrom , 500Angstrom and 4,000Angstrom , respectively, the picture element is formed. In such a way, a characteristic for satisfying >=5% transmittivity by which the picture quality is satisfactory, and also, >=90% write rate in a prescribed time is obtained.</p>
申请公布号 JPH01169432(A) 申请公布日期 1989.07.04
申请号 JP19870327066 申请日期 1987.12.25
申请人 HITACHI LTD 发明人 ADACHI HIDEMI;YOSHIMURA MASAO;ONO KIKUO
分类号 H01L27/12;G02F1/133;G02F1/136;G02F1/1368 主分类号 H01L27/12
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