| 摘要 |
PURPOSE:To improve throughput and yield by controlling an element to be treated at a higher temperature than the predetermined baking temperature by the value lower than the temperature corresponding to the quality of heat absorbed from a hot plate before placing the element to be treated on the plate, reducing the temperature of the plate, after plating, by the temperature corresponding to the quality of heat absorbed from the plate, and then heating it at the baking temperature. CONSTITUTION:Before a semiconductor wafer 2 is placed, a hot plate 1 is so heated by a heater 3 under the control of a heater controller 4 that the temperature of the plate 1 becomes lower, for example, 1 deg.C than the temperature corresponding to the quality of heat absorbed from the plate 1, after the wafer 2 is placed, such as predetermined baking temperature, for example, 120 deg.C. The wafer 2 at a room temperature, such as 20 deg.C is placed on the plate 1 by a conveying mechanism. The placed wafer 2 is heated by thermal conduction from the plate 1. After the wafer 2 is placed, the heat is absorbed to the wafer 2, the plate 1 is reduced at its temperature so that the plate 1 is reduced lower, for example, 1 deg.C than the predetermined baking temperature, such as 120 deg.C. Thereafter, the plate 1 is set to the baking temperature, thereby baking the wafer 2. |
